Articles on Amplifiers

This Article by Sonoko Akamatsu, Charles Baylis, and Larry Dunleavy details the design goals and simulation- based processes for Power Amplifier Design.

History of the Cable Industry. History of CATV Amplifiers and Hybrid Amplifiers. CATV Hybrid Amplifiers Today. What the Future Holds.

This Article describes the process for developing and implementing an effective power amplifier linearization scheme using baseband adaptive digital pre-distortion.

This Article by Wan-Jong Kim, Shawn P. Stapleton, Jong Heon Kim, and Cory Edelman focuses on how digital predistortion linearizes wireless power amplifiers.

This article covers the advantages and disadvantages of competing power amplifier technologies for radar applications. With a focus on how GaN power amplifiers are shaping the future of radar.

This article features a method of designing a low noise RF amplifier for an 802.11b receiver application and contains an Avago ATF54143. PHEMT transistor. ADS design tools are used such that the techniques presented remove much of the guesswork from the design process. Design speed and cost along with RF performance are of utmost importance for most RF designs, thus, one of the main objectiv...

To better understand CCDF curves, a digitally modulated signal is examined. Unfortunately, the signal in this form is difficult to quantify because of its inherent randomness and inconsistencies. In order to extract useful information from this noise-like signal, a statistical description of the power levels in this signal is used.

RFMD has developed 400W pulsed output power GaN HEMT amplifiers operating over 2.9GHz to 3.5GHz band or 17% bandwidth. Under pulsed RF drive with 10% duty cycle and 100 ms pulse width, the amplifier delivers output power in the range of 401W to 446W over the band, with drain efficiency of 48% to 55% when biased at drain voltage of 65V. The amplifier u...

Many different semiconductor technologies are currently being used for power amplifiers (PAs) that include a mix of Silicon and GaAs devices – Silicon Bipolar, Silicon MOSFET, GaAs MESFET, GaAs HBT and GaAs pHEMT. Avago uses enhancement-mode pHEMT (E-pHEMT) process for its PA design while most competitors have developed GaAs HBT technology. This paper shows why E-pHEMT technology can p...

This document is part of Watkins-Johnson Tech-notes which was a bi-monthly perodical circulated to educational institutions, engineers, managers of companies, government agencies and technicians in 1978. Though these Tech-notes are dated, they cover the fundamentles of RF & Microwave Engineering which still hold. This Tech-note goes discusses development of microwave limiting ampl...