September 11, 2014
TechNavio has released a report that forecasts the Global GaN Semiconductor Devices market to grow at a CAGR of 26.9% from 2014 to 2018. Gallium Nitride (GaN) is a wide band gap semiconductor material with properties such as high saturation velocity and high breakdown voltage. These properties make it an ideal choice for for high power applications in high-voltage switching devices such as radio frequency (RF) power amplifiers. GaN semiconductor devices are smaller, lighter, tougher, and more efficient than silicon semiconductor devices and are hence used to replace silicon in semiconductor devices.