Richardson RFPD Introduces New 30W GaN Power Amplifier from TriQuint
21 September,2012
everything RF
Richardson RFPD, Inc. announced immediate availability and full design support capabilities of a new 30W GaN power amplifier from TriQuint Semiconductor, Inc. (TriQuint).
The TGA2576-FL is a packaged wideband power amplifier fabricated on TriQuint's production-released 0.25 dBm GaN on SiC process. Operating from 2.5 GHz to 6 GHz, the device achieves 45.5 dBm saturated output power, 35% PAE and 26 dB small signal gain. Fully matched to 50 ohms and with integrated DC blocking caps on both I/O ports, the TGA2576-FL is ideally suited to support both commercial and defense related applications.
Key features of the TGA2576-FL include:
· Frequency Range: 2.5 – 6 GHz
· Psat: 45.5 dBm @ Pin = 26 dBm
· PAE: 35 %
· Small Signal Gain: 26 dB
· Bias: Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V Typical
· Dimensions: 11.4 x 17.3 x 3.0 mm
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