Richardson RFPD Introduces Three GaN on SiC SPDT Switches from TriQuint
17 October,2012
everything RF
Richardson RFPD, Inc. announced immediate availability and full design support capabilities for three single-pole, double-throw (SPDT) switches designed using the 0.25?m GaN on SiC production process from TriQuint Semiconductor, Inc. (TriQuint).
The packaged TGS2351-SM operates from DC to 6 GHz and typically provides up to 40 W input power handling at control voltages of 0 / -40 V. This switch maintains low insertion loss of less than 1 dB and high isolation of -40 dB typical. The TGS2352 operates from DC to 12 GHz and typically provides up to 20 W input power handling at control voltages of 0 / -40 V. This switch maintains low insertion loss of 1 dB and high isolation of -35 dB typical. The TGS2353 operates from DC to 18 GHz and typically provides up to 10 W input power handling at control voltages of 0 / -40 V. This switch maintains low insertion loss of 1.5 dB and high isolation of -30 dB typical.
The new SPDT switches are ideally-suited for high power switching applications, including electronic warfare, commercial and military radar, and high power communications systems.
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Additional key features of the devices include: Part Number
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Frequency Range (GHz)
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Insertion Loss (dB)
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Isolation (dB)
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Max Input Power (dBm)
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Switching Time (ns)
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Package Type (mm)
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TGS2351-SM
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0-6
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0.8
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-40
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46
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50
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4.0 x 4.0 x 1.43
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TGS2352
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0-12
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1.0
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-35
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43
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31
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1.15 x 1.65 x 0.1
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TGS2353
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0-18
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1.5
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-30
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40
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31
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1.15 x 1.65 x 0.1
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The devices are in stock and available for immediate delivery. To find more information, or to purchase these products today on the Richardson RFPD website, please visit the TriQuint Featured GaN Switches webpage http://www.triquint.com/ and http://www.richardsonrfpd.com
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