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Amplifiers
RF3931: 30W GaN Wide-Band Power Amplifier from RFMD
RFMD's RF3931 unmatched power transistor achieves high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3931 is packaged in a hermetic, flanged ceramic package providing excellent thermal stability through the use of advanced heat sink and power dissipation technologies. These wide bandwidth, unmatched power transistors enable the development of high-efficiency HPAs for a broad range of applications.
The RF3931 is a 48 V 30 W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications.
Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3931 is an unmatched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.
This wideband power transistor will enable the development of high-efficiency HPAs for a broad range of applications.
Product Specs
• Broadband Operation DC to 3 GHz
• Advanced GaN HEMT Technology
• Advanced Heat-Sink Technology
• Gain = 15 dB at 2 GHz
• 48 V Operation Typical Performance
- Output Power 30 W at P3dB
- Power Added Efficiency 65%
- -40°C to 85°C Operation
• EAR99 Export Control
Applications
• Cellular Infrastructure
• WiMAX
• CATV
• Military Communications
• Radar
Click here for the RF3931 Datasheet
For more information visit:
www.rfmd.com
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