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RF News
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Tier-One Wireless Base Station Manufacturer orders first GaN product from RFMD
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Nov 16, 2009
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World leaders in manufacturing and designing high performance semiconductor components, RF Micro Devices Inc.has announced its first purchase order from OEM, a tier-one wireless base station original equipment manufacturer. The RFMD’s RFG1M09180, a 180-watt broadband power transistor is the product ordered which is in support of the global expansion of 4G wireless networks. This purchase order features RFMD’s state-of-the-art gallium nitride process technology known as GaN.
The RFG1M09180 supports LTE at 750-800MHz, 3GPP/IS95 at 865-895MHz and multi-carrier GSM at 930-960MHz which ensure cost-effective and energy-efficient operation of multi-standard base stations. These RFG1M0981 products belong to the category of RFG1M power device which can address the power requirement up to 360-watt, supports wireless communication bands ranging from 0.7GHz to 3.8GHz and provides more bandwidth than the incumbent LDMOS technology. Other services from the RFG1M power family include high-efficient techniques, internal matching, envelope tracking and Doherty.
According to the Vice President and General Manager, RFMD’s Defense and Power business unit they are happy to announce their first purchase order of GaN from the tier-one wireless base station OEM and has also commented on the superior technology incorporated in bandwidth, efficiency and output power offered by RFMD’s GaN process technology and also firmly stated that the RFG1M09180 has everything to form its grip in next generation base station applications. Bob Van Buskirk, President, RFMD’s MPG, added, “With the superior performance of our innovative GaN technology, RFMD is excited to support next-generation base station transmit applications. He further said that they are actively targeting the base station market and expect an enthusiastic response within the next three years.”
This high-tech GaN process technology offered by RFMD ensures par excellence RF power per square millimeter and superior RF conversion efficiency as compared to other semiconductor technologies available in the market. This innovative and powerful GaN technology has everything to beat the other competitions in the existing defense and commercial markets. Satisfying business’s reduced energy requirement, RFMD’s GaN HPAs offer industry-leading power performance. Promoting the green culture, RFMD’s technology offers increased efficiency by cutting network-related energy costs.
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