The A2I25H060N from NXP Semiconductors is a RF Amplifier with Frequency 2.3 to 2.69 GHz, Gain 27.5 dB @ 2590 MHz, P1dB 47.2 dBm, P1dB 52 W, Output Power 40 dBm. Tags: Power Amplifier, LDMOS Amplifier. More details for A2I25H060N can be seen below.
2.7 to 3.5 GHz 18 Watt GaN Power Amplifier
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