The A2I35H060N from NXP Semiconductors is a RF Amplifier with Frequency 3.4 to 3.8 GHz, Gain 24 dB @ 3500 MHz, P1dB 46.8 dBm, P1dB 48 W, Output Power 40 dBm. Tags: Power Amplifier, LDMOS Amplifier. More details for A2I35H060N can be seen below.
2.7 to 3.5 GHz 18 Watt GaN Power Amplifier
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