RFHIC GaN Hybrid Amplifier HS5758-10A is specifically designed for 802.16 WiMAX systems in the 5.8 GHz ISM Band and Point-to-point applications operating from 5725 to 5875 MHz. With a high drain efficiency of 45%, this amplifier achieves 41 dBm Psat and 1.5 W Average Power at 3% EVM. The HS5758-10A uses GaN on SiC HEMT devices on an alumina substrate, which provides excellent thermal dissipation via chip on board. The Amplifier is matched to 50 Ohms at the input and output with integratedbias circuits. It is available in a surface mount package.