RF Transistor by Wolfspeed (65 more products)

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The CGH55030F2/P2 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 4500 to 6000 MHz and can provide an output power of up to 25 W. GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

  • Part Number
  • Manufacturer
  • Description
    25 W, C-band, Unmatched, GaN HEMT
  • Transistor Type
  • Application Industry
    Radar, SATCOM, Telecom, Military
  • Application Type
    Point to Point, Data Link, Radar, UAV
  • Grade
    Military, Aerospace, Commercial
  • Frequency
    4500 to 6000 MHz
  • Power
    25 W
  • Power Added Effeciency
  • Technology
  • Package
    Ceramic, Flanged
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