CGHV27150MP Image


RF Transistor by Wolfspeed (65 more products)

Note : Your Quotation Request will be directed to Wolfspeed.

The CGHV27150MP is a gallium nitride (GaN) HEMT designed specifically for high efficiency, high gain applications from 2.3 to 2.7 GHz. It provides an output power of 150 Watts, gain of 16 dB, and has an efficiency of 34%. This GaN HEMT device is ideal for LTE, 4G Telecom and BWA amplifier applications. It is available in an overmold flange package which is matched at the input to 50 ohms.

Product Specifications

  • Part Number
  • Manufacturer
  • Description
    150 W, 2.3 to 2.7 GHz, 50 V, GaN HEMT for LTE
  • Transistor Type
  • Application
  • Application Type
    Cellular, Communication
  • Grade
  • Frequency
    2.3 to 2.7 GHz
  • Gain
    16 dB
  • Power
    51.76 dBm
  • Drain Efficiency
  • Saturated Power
    170 W
  • Package
    Surface Mount
  • Tags
    Plastic GaN Transistor
Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

Let us know what you need, we can help find products that meet your requirement.