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The IB1011M660 from Integra Technologies, Inc. is a RF Transistor with Frequency 1030 MHz, Gain 11.1 dB, Power 58.48 dBm, Input Power 705 W, Supply Voltage 50 V. More details for IB1011M660 can be seen below.
1805 to 1880 MHz, 89 W Airfast RF Power LDMOS Transistor
4500 to 5900 MHz GaN HEMT for C-Band Radar Systems
GaN HEMT Transistor 1.2 to 1.4 GHz
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