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The IB1011S70 from Integra Technologies, Inc. is a RF Transistor with Frequency 1030 to 1090 MHz, Gain 10.4 dB, Power 49.4 dBm, Input Power 87 W, Supply Voltage 50 V. More details for IB1011S70 can be seen below.
1805 to 1880 MHz, 89 W Airfast RF Power LDMOS Transistor
4500 to 5900 MHz GaN HEMT for C-Band Radar Systems
GaN HEMT Transistor 1.2 to 1.4 GHz
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