MGFS39G38L2 Image


RF Transistor by Mitsubishi Electric US, Inc. (3 more products)

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The MGFS39G38L2 from Mitsubishi Electronics is a GaN-HEMT transistor that has been developed for use in 4G/LTE Base Station Transceivers from 3.5 GHz to 3.8 GHz. This GaN-HEMT provides up to 39 dBm of saturated power with a gain of 19 dB and drain efficiency of 67 %. It requires a supply of 50 V and is available in a compact package.

Product Specifications

  • Part Number
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    3.5 GHz to 3.8 GHz GaN HEMT Transistor for 4G/LTE Base Station Transceivers
  • Transistor Type
  • Application
    4G, LTE
  • Application Type
    Base Stations, Cellular
  • Frequency
    3.4 to 3.8 GHz
  • Gain
    19 dB
  • Power
    39 dBm
  • Supply Voltage
    50 V
  • Drain Efficiency
  • Package
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