The A2T26H160-24S from NXP Semiconductors is a RF Transistor with Frequency 2496 to 2690 MHz, Power Gain (Gp) 21.5 dB, Power 44.47 dBm, Supply Voltage 28 V, Effeciency 46.5%. More details for A2T26H160-24S can be seen below.
1805 to 1880 MHz, 89 W Airfast RF Power LDMOS Transistor
4500 to 5900 MHz GaN HEMT for C-Band Radar Systems
GaN HEMT Transistor 1.2 to 1.4 GHz
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