The AFT26H160-4S4R3 is an asymmetrical Doherty RF power LDMOS transistor, designed for cellular base station applications operating from 2496 to 2690 MHz. It can handle up to 32 W of power, has a gain of 14.9 dB and efficiency of 45.7%. The power transistor requires a supply of 28 V and is available in ceramic flanged package.

Product Specifications

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    2496 to 2690 MHz LDMOS Transistor Provides 32 Watts with 28 V Supply
  • Transistor Type
  • Application
  • Application Type
    Macro Cells, Base Stations
  • Frequency
    2496 to 2690 MHz
  • Gain
    15.7 dB
  • Power
    32 W
  • Supply Voltage
    28 V
  • Package Type
    Ceramic, Flanged
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