The MHE1003N from NXP Semiconductors is a RF Transistor with Frequency 2450 MHz, Gain 14.1 dB @ 2450, Power Gain (Gp) 14.1 dB @ 2450, Power 53.1 dBm, P1dB 53.1 dBm, 206 W. More details for MHE1003N can be seen below.
1805 to 1880 MHz, 89 W Airfast RF Power LDMOS Transistor
4500 to 5900 MHz GaN HEMT for C-Band Radar Systems
GaN HEMT Transistor 1.2 to 1.4 GHz
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