This 1500W RF LDMOS power transistor from NXP operates from DC to 500 MHz. It delivers 1.50 kW CW at 50V and can survive a VSWR of 65:1. The level of ruggedness increases its reliability, which makes this transistor an excellent alternative to vacuum tubes. It can reduce the number of transistors used in high-power RF amplifiers, which decreases the amplifier size and bill of materials. The transistor has an efficiency of 80 percent at 100 MHz, gain of 23.5 dB, and minimum breakdown voltage of 135V. It is available in a standard air cavity ceramic package and its impedance is compatible with existing high-power transistors, which makes it easier to use this transistor with existing systems without any changes in PCB design. Even greater reliability can be achieved with the over-molded plastic version of this transistor. It has applications in laser and plasma sources to particle accelerators, industrial welding machines, radio and VHF TV broadcast transmitters, and amateur radio linear amplifiers. This transistor will be a part of NXP's Product Longevity Program i.e., availability for at least 15 years.

Product Specifications

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    1500 W LDMOS RF Power Transistor
  • Transistor Type
  • Application
  • Grade
    Military, Commercial
  • Frequency
    500 MHz
  • Gain
    23.5 dB
  • Power
    61.76 dBm
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    135 V
  • Effeciency
    80% at 100 MHz
  • VSWR
  • Package
    Ceramic, Plastic
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