The MRF6S23140H from NXP Semiconductors is a RF Transistor with Frequency 2300 to 2400 MHz, Gain 15.2 dB at 15.2 MHz, Power 140 W, P1dB 140 W, Supply Voltage 28 V. More details for MRF6S23140H can be seen below.
1805 to 1880 MHz, 89 W Airfast RF Power LDMOS Transistor
4500 to 5900 MHz GaN HEMT for C-Band Radar Systems
GaN HEMT Transistor 1.2 to 1.4 GHz
You can now find similar products from multiple companies on everything RF.