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The TGF2023-01 from Triquint is a discrete power GaN on SiC HEMT which operates from DC to 18 GHz. It provides 38 dBm of saturated output power with a powergain of 18 dB and an efficiency of 66%. It is designed using TriQuint’s proven 0.25um GaN
1805 to 1880 MHz, 89 W Airfast RF Power LDMOS Transistor
4500 to 5900 MHz GaN HEMT for C-Band Radar Systems
GaN HEMT Transistor 1.2 to 1.4 GHz
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