TGF2929-FL Image


RF Transistor by Qorvo (85 more products)

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The TGF2929-FL from Qorvo is a ceramic GaN on SiC HEMT Transistor that operates from DC to 3.5 GHz. It is ideal for military and civilian radars, radio communications, test instrumentation and jammer applications. Operating at 28 V it provides 107 W of power (P3dB) with a gain of more than 14 dB at 3.5 GHz.

Product Specifications

  • Part Number
  • Manufacturer
  • Description
    100W, DC to 3.5 GHz, GaN RF Power Transistor
  • Transistor Type
  • Application
  • Application Type
    Military, Commercial, Test Instrumentation
  • Grade
    Military, Commercial
  • Frequency
    DC to 3.5 GHz
  • Gain
    21.2 dB(more than 14 dB at 3.5 GHz)
  • Power
    50 dBm
  • Supply Voltage
    28 V
  • Power Added Effeciency
  • Package
  • Storage Temperature
    -40 to 150 Degrees C
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