TGF2977-SM Image


RF Transistor by Qorvo (85 more products)

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The TGF2977-SM from Qorvo is a GaN on SiC HEMT transistor that operates from DC to 12 GHz. It provides up to 6 W of power with a linear gain of 13 dB and efficiency of 50%. The HEMT power transistor requires a 32 V supply for operation and draws 25 mA of current. It is housed in an industry-standard 3 x 3 mm surface mount QFN package. It can be used in military radar and civilian radar applications.

Product Specifications

  • Part Number
  • Manufacturer
  • Description
    5 Watt GaN HEMT from DC to 12 GHz
  • Transistor Type
  • Application
    X Band
  • Application Type
  • Frequency
    8 to 12 GHz
  • Gain
    12.5 dB
  • Power
    37 dBm(P3dB)
  • Drain Efficiency
  • Package Type
    3x3 QFN
  • Package
    Surface Mount
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