The SKY67012-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and on-die stability structures enabling simple external matching The advanced GaAs pHEMT enhancement mode process provides excellent return loss, lower noise, and higher linearity performance compared to SiGe LNAs. The internal active bias circuitry provides stable performance over temperature, and process variation. The device offers the Designer the ability to externally adjust supply current between 5 – 15 mA. Noise Figure of 0.85 dB, 16.5 dB Gain and 24 dBm OIP3 are achievable at 0.45 GHz with 3.3V supply and 15 ma of bias current. The device can also be biased from 1.8 to 5V and will still achieve an OIP3 of 18 dBm, and 15 dBm OP1dB with only 5 mA of bias current from 3.3V supply. This LNA is ideal for...More
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Fast and accurate radar pulse measurements are critical when designing or manufacturing radar components. Knowing how to optimize power measurement tools will help engineers meet stringent market demands. Get tips on how to make the fastest and most accurate radar pulse measurements by reading this application note. This article also includes real-world scenarios that demonstrate how to put these tips into practice with Agilent power meters and sensors.
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