TQP3M9039

RF Amplifier  by TriQuint Semiconductor
TQP3M9039 - RF Amplifier from TriQuint Semiconductor

  500 to 1500 MHz GaAs pHEMT low-noise amplifier: 0.5dB noise figure; 38.8dB OIP3; 21dBm P1dB RF output power; single positive supply (4.35V at 57mA). Its dual-amplifier structure enables balanced operation; it provides adjustable bias (drain current and voltage) and integrated bias shut-down capability for FDD and TDD operation. Offered in a 4x4mm QFN pkg. The TQP3M9039 consists of a single monolithic GaAs E-pHEMT die and integrates bias circuitry as well as shut-down capability allowing the LNA to be useful for both FDD and TDD applications. The TQP3M9039 is optimized for the 500 - 1500 MHz band, but can be used outside of the band. TriQuint offers pin-compatible dual LNAs for the 1.5 - 2.3 GHz band (TQP3M9040) and 2.3 - 4.0 GHz (TQP3M9041). The balanced amplifier is optimized for high performance receiv...More

Product Specifications

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  • PartNumber
    TQP3M9039
  • Description
    500 to 1500 MHz, High IP3 Dual E-PHEMT Low Noise Amplifier for Base Station Applications
  • Industry Application
    Wireless / Communication
  • Configuration
    IC / MMIC
  • Application
    Wireless Infrastructure, Tower Mount Amplifier
  • Band / Standards
    LTE,WCDMA
  • Type
    Low Noise Amplifier
  • Frequency
    500 to 1500 MHz
  • Gain
    18 dB
  • Noise Figure
    0.6 dB
  • Ourput Power (dBm)
    21.5 dBm
  • Output Power (W)
    0.1413 W
  • P1dB
    21.5 dBm
  • P1dB
    0.1413 W
  • IP3
    38.8 dBm
  • IP3 (W)
    7.5858 W
  • Supply Voltage
    4.35 V
  • Current Consumption
    57 mA
  • Package Type
    Surface Mount
  • Dimensions
    4 x 4 mm
  • RoHS
    Yes


Supplier Details

TriQuint Semiconductor

Address: TriQuint Inc. 2300 NE Brookwood Parkway, Hillsboro, Oregon 97124, United States

Tel: +1 (503) 615-9000

 
 
 

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