Wolfspeed Showcases its RF and Microwave GaN Product Portfolio at IMS 2020

Wolfspeed, a leading provider of SiC, GaN Power, and RF solutions is showcasing its broad range of advanced RF & Microwave products and capabilities at the virtual International Microwave Symposium (IMS 2020) event. Wolfspeed is featuring narrated presentations and product portfolio presentations followed by an industry workshop conducted by the representatives from the company.

Here is what Wolfspeed is Showcasing at IMS 2020

NARRATED PRESENTATIONS

New G28V5 Process Provides Ka-Band GaN MMIC Capability

Discussion of the Wolfspeed Foundry capabilities and services as well as further details on the newest process for MMICs & RF devices. Download the presentation.

Thermal Considerations for High Power GaN RF Amplifiers

To maximize lifetime and performance of GaN based amplifier systems, it is necessary to fully understand its thermal environment and limitations. Download the presentation.

New RF Power Solution for Band 41 with 400 W P3dB and 53% Efficiency

Wolfspeed’s new RF power Doherty solution for Band 41 cellular amplifier applications offers >400W P3dB output power, 53% efficiency and 195 MHz IBW. Download the presentation.

FEATURED PRODUCTS

15 W, 2.7 to 3.5 GHz, 50 V, GaN MMIC Power Amplifier

Wolfspeed’s CMPA2735015 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz

The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.


25 W, 6.0 – 18.0 GHz, 22 V, GaN MMIC Power Amplifier

Wolfspeed’s CMPA601J025D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.15-μm gate-length fabrication process. GaN on SiC has superior properties compared to silicon, gallium arsenide, or GaN on Si, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si, GaAs, and GaN on Si transistors. This MMIC contains a reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

25 W; 20 MHz – 6000 MHz; GaN MMIC Power Amplifier

Wolfspeed’s CMPA0060025F1 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables extremely wide bandwidths to be achieved in a small-footprint; screw-down package.

INDUSTRY WORKSHOPS

Wolfspeed will also be hosting industry workshops taken by its experts Yueying Liu, RF Device Modelling Manager (Aug 5, 2020, 6:50 PM - 8:30 PM EDT) and Kasyap Patel, RF Application Engineer (Aug 6, 2020, 1:10 PM - 2:50 PM EDT).

Topics covered in the workshop are:

Designing GaN on SiC MMIC Power Amplifiers Using the Cree/Wolfspeed MWO PDK by Yueying Liu

In this workshop, an overview of the Wolfspeed foundry Process Design Kit and nonlinear device model will be presented. A detailed discussion of usage guidelines and design boundaries will be covered along with key aspects of designing MMICs using the kit. In this two-hour session, you will learn how to best utilize the functions and features in the MWO PDK, including proper ways of handling various situations for thermal, stability, and design rules. Furthermore, the audience will gain insight into the use of these features for key performance analysis. Click to know more.

Practical GaN Power Amplifier Design - Modeled vs Measured Performance, Tricks and Tips for Avionics and Satcom Applications by Kasyap Patel

In this workshop, we will walk power amplifier designers through the process of using MWO Large Signal Models for discrete transistors from Wolfspeed. Designs presented include a 200W single-ended GaN avionics power amplifier and a 25W C-Band GaN Satcom power amplifier. The designer will show how to accurately simulate the designs using self-heating features, via-farms, and full EM simulation. The native features and functions of the Wolfspeed MWO will also be covered in detail. Click to know more.

Click here to register for the workshop.

Click here to know more about Wolfspeed’s showcase at IMS 2020.

Click here to view everythingRF’s coverage of IMS 2020 for more highlights from the virtual event.