Altum RF to Develop GaN Ka-Band High Power Amplifiers for the European Space Agency

Altum RF, a supplier of high-performance RF to millimeter-wave semiconductor solutions for next generation markets and applications, has signed a two-year contract with the European Space Agency (ESA) under the ARTES Advanced Technology program to design and develop gallium nitride (GaN) Ka-band high power amplifiers for very small aperture terminals (VSATs).

Starting in January 2021, the objective of the project is to develop Ka-band high-efficiency power amplifiers, using a cost-effective package. These high power amplifiers are well suited for VSATs, two-way ground stations that transmit and receive data from satellites. Based in Eindhoven, The Netherlands, Altum RF, is an ideal match for this project due to its European headquarters.

Greg Baker, Altum RF CEO, said that they are excited to announce this strategically-aligned project with ESA that will further strengthen their product growth and development plans over the next two years. This contract award also establishes the confidence ESA shows in their innovative design and solid execution capabilities, and they look forward to collaborating with ESA.

Niels Kramer, Altum RF Managing Director Europe and Vice President Marketing, added, “From a highly-respected organization, the ESA contract recognizes the GaN design capabilities Altum RF has demonstrated and allows us to continue expanding our design and development activities in the Eindhoven office.”

Elodie Viau, Director of Telecommunication and Integrated Applications, ESA said, “The ARTES Advanced Technology programme is dedicated to the innovative technological development of the satcom industry and its applications. We are delighted to be able to assist Altum RF in developing this ground equipment – which represents a very promising new technology for future and evolving space-based telecommunication services.”