Qorvo Introduces 100 W GaN Power Amplifier for C-Band Applications

Qorvo, a leading provider of innovative RF solutions that connect the world, introduced the industry's highest-power GaN MMIC power amplifier (PA) that delivers up to 100 watts of saturated power in a small, 7 mm x 7 mm QFN package. The PA is internally matched and requires no additional external RF components, enabling designers and system integrators to maximize design by reducing size and weight while offering better performance. The integrated Surface Mount Technology (SMT) package design enables customers to manufacture at a lower cost compared to die or bolt-down flange package alternatives.

The Qorvo QPA2309, built on the company's patented QGaN25HV wafer process, operates between 5-6 GHz (C-band) and delivers an industry-best power added efficiency (PAE) of 52%. This GaN PA provides defense radar customers with two times higher saturated power, higher large signal gain, and improved PAE in the same package size as the previous generation product. Qorvo also offers customers the option of a 50-watt version (QPA2310) in the same package configuration.

The QPA2309 gives defense customers the ability to dramatically increase their power density output in the same design footprint, to increase radar range and sensitivity without adding size or weight.

The QPA2309 and QPA2310 with the following specifications are available for sampling to qualified customers.

SpecificationsQPA2309QPA2310
Frequency range5-6 GHz5-6 GHz
Saturated output power100 Watts50 Watts
PAE52 %53 %
Power gain22 dB23 dB
BiasVD= 50 V, and IDQ= 600 mAVD= 50 V, and IDQ= 300 mA

Package dimensions7 x 7 x 0.82 mm7 x 7 x 0.82 mm

Qorvo

  • Country: United States
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