MACOM Signs Co-Operative R&D Agreement with US Air Force on GaN-on-Sic Technology

Semiconductor solutions expert, MACOM has entered into a Cooperative Research and Development Agreement with the United States Air Force Research Laboratory (AFRL) regarding the use of Gallium Nitride-on-Silicon Carbide (GaN-on-SiC) technology. Under the agreement, AFRL and MACOM will work together to transfer AFRL’s production ready 0.14-micron GaN-on-SiC semiconductor process to MACOM’s Massachusetts-based U.S. trusted foundry. Semiconductor experts from both parties will collaborate to support a rapid process transfer to MACOM.

The AFRL GaN-on-SiC process is suitable for monolithic microwave integrated circuit (MMIC) products and is capable of achieving industry leading frequency and power density performance. Once the process is transferred, MACOM anticipates that it will expand its standard and custom MMIC product offerings.

This semiconductor process will enable us to enter the microwave and millimeter wave GaN MMIC market with high-performance products,” said Stephen G. Daly, MACOM’s President and Chief Executive Officer. “Our wafer fabrication facility is already well equipped to support GaN, including installed electron beam lithography capability, so we can bring the process online with minimal capital investment. We intend to service a wide range of commercial and U.S. defense opportunities, including satellite communication systems, as well as land-, air- and sea-based radar systems.”

We look forward to MACOM supporting critical U.S. Air Force and Department of Defense requirements with an industrialized and best in class GaN semiconductor process,” said Dr. Robert Fitch of AFRL Sensors Directorate. “Expanding domestic advanced semiconductor manufacturing is a national priority.”


MACOM

  • Country: United States
More News from MACOM