Mitsubishi Electric Introduces Ku-Band GaN HEMTs for SATCOM Earth Stations

Mitsubishi Electric Corporation has introduced two new 13.75-14.5 GHz (Ku-band) 30W (45.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) to the company's GaN HEMT lineup for satellite-communication (SATCOM) earth stations. The two products, one for multi-carrier communication and the other for single-carrier communication will support increased data-transmission capacity and smaller earth stations. Sales will begin on March 15. The communication method uses a single-frequency carrier signal. Voice, video, and data communication method that uses carrier signals of various frequencies.

Key features of MGFK45G3745A are as follows:

  • It delivers low IMD33 with wide offset frequencies4 of up to 400MHz for large-capacity, high-speed satellite communication.
  • The frequency difference between two-tone signals, used in IMD3 measurements.
  • Third-order intermodulation distortion, a measure of amplifier distortion in the case of two-tone signals.

Ku-band satellite systems are increasingly being deployed for emergency communication during natural disasters and satellite newsgathering (SNG) by TV broadcasters in remote areas where cable networks do not exist. Meanwhile, in addition to the growing use of conventional single-carrier communication, multi-carrier communication is increasingly needed for fast, high-volume communication and to support the downsizing of mobile stations for purposes such as SNG. So far, Mitsubishi Electric has introduced five GaN HEMTs for multi-carrier and single-carrier SATCOM earth stations. The two new 30W GaN HEMTs will enable more flexible amplifier designs, including rated power levels and the use of GaN drivers. They also will support the downsizing of earth stations as well as faster, larger-capacity satellite communication.

Parameters of single-carrier communication products are given below in the table:

Model
MGFK45G3745
MGFK48G3745
MGFK50G3745
MGFG5H1503
Frequency
13.75-14.5 GHz
13.75-14.5 GHz
13.75-14.5 GHz
13.75-14.5 GHz
Saturated output power
45.3 dBm (30 W)
48.3 dBm (70 W)
50 dBm (100 W)
43 dBm (20 W)
Linear gain
9.5 dB
12 dB
10 dB
24 dB
Offset frequency @IMD3 = -25dBc
Up to 5 MHz
Up to 5 MHz
Up to 5 MHz
Up to 5 MHz

Parameters of multi-carrier communication products are given below in the table:

ModelMGFK45G3745A
MGFK48G3745A
MGFK50G3745A
Frequency
13.75-14.5 GHz
13.75-14.5 GHz
13.75-14.5 GHz
Saturated output power
45.3 dBm (30 W)
48.3 dBm (70 W)
50 dBm (100 W)
Linear gain
9.5 dB
11 dB
10 dB
Offset frequency @IMD3 = -25dBc
Up to 400 MHz
Up to 400 MHz
Up to 200 MHz