Knowles Introduces Single Layer 100 nF Capacitor for GaN and GaAs Amplifier Applications

Knowles Precision Devices has announced the release of a single layer 100 nF capacitor within its V-Series of single-layer capacitors. The 100 nF is a high frequency, wire bondable single layer capacitor, making it ideally suited for GaN and GaAs amplifier applications where small size and microwave performance are critical. It operates up to 40 GHz and has X7R temperature stability and wire bondability. The capacitor is ideal for filtering, tuning, and coupling applications.

Benefits of this Single Layer Capacitor:
  • High capacitance density.
  • Higher voltage handling for GaN.
  • Up to 10 nF in 30 mils square size.
  • Up to 200 W for high-powered system needs.
  • Can be epoxy or AuSn solder mounted.

The 100 nF leverages class II dielectric material with X7R characteristics for DC blocking and RF bypassing in a broad frequency range. It offers the best possible moisture sensitivity level (MSL-1), and has a high capacitance density, and can be attached using conductive epoxy or be AuSn solder mounted.

High-frequency MMIC amplifiers with broadband gain need to be protected from RF noise on supply lines. Supply noise can mix with RF signals, impacting signal-to-noise ratios and potentially causing spurious output. Hence 100 nF can be used in the RF bypass circuit for eliminating supply line noise. A bypass capacitor provides an efficient path to the ground for RF energy on the supply line before it enters a gain stage.

Click here to learn more about the V-Series single-layer capacitors.


  • Country: United States
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