STMicroelectronics Introduces New RF LDMOS Power Transistors

STMicroelectronics Introduces New RF LDMOS Power Transistors712370

STMicroelectronics is adding a broad range of new devices to the STPOWER family of LDMOS RF transistors. This family of transistors consists of three different product series optimized for RF power amplifiers (PAs) in a variety of commercial and industrial applications.

Featuring high efficiency and low thermal resistance and packaged to handle high RF power, STPOWER LDMOS devices combine a short conduction-channel length with a high breakdown voltage. These characteristics permit a cost-effective solution with low power consumption and high reliability.

Expanding the range of applications that can be addressed, the new STPOWER LDMOS IDCH and IDDE series are 28/32 V common-source N-channel enhancement-mode lateral field-effect RF power transistors. IDCH devices provide output power from 8 to 300 W and are specifically designed for applications up to 4 GHz, including 2.45 GHz industrial, scientific, and medical (ISM), wireless infrastructure, satellite communications, and avionics and radar equipment. The LDMOS devices are suitable for all types of modulation formats.

The IDDE series contains 10-700 W devices for broadband commercial, industrial, and scientific applications at frequencies up to 1.5 GHz. The devices can withstand a load VSWR (voltage standing wave ratio) of 10:1, through all phases. They are suitable for all typical modulation formats, and for most classes of RF PA operation including Class A, Class AB, and Class C. Their high efficiency minimizes the energy needed to deliver the required output power, resulting in lower operating costs and reduced heat dissipation thereby simplifying thermal management and enabling more compact systems.

ST has also introduced devices in the new IDEV series, featuring a 50 V common-source, N-channel enhancement mode, lateral field-effect, RF power transistor technology. With output power from 15 W up to 2.2 kW, the IDEV portfolio is designed for ISM applications at frequencies up to 250 MHz, including driving high-power CO2 lasers, plasma generators, MRI systems, broadcast FM-radio transmitters in the 88–108 MHz range, and avionics and radar applications up to 1.5 GHz. They are suitable for all typical modulation formats and for PA operation in Class A, Class AB, and Class C.

The rugged IDEV series is capable of up to 2.2 kW continuous-wave (CW) output power, from HF (3-30 MHz) frequencies up to 250 MHz. Delivering high power from a single ceramic package, these devices reduce the total number of RF power transistors needed in high-power applications such as broadcast transmitters. Power efficiency greater than 82% minimizes system power demand and ensures high reliability with simple thermal management.

In total, ST is introducing 30 new STPOWER RF LDMOS devices across the three series, in various industry-standard packages. Budgetary pricing is in the range of $15 to $100.

Click here to learn more about LDMOS transistors from ST.

Publisher: everything RF
Tags:-  TransistorsLDMOS