Tagore Technology Inc., a pioneer of high-power, low-current GaN-based RF switches, has introduced the TSL8329M, a dual-channel Low Noise Amplifier (LNA) with an integrated RF switch, and multichip module. Designed for demanding applications, the module operates from 3.3 to 4.2 GHz. This dual channel module is architected with cascading a two-stage LNA and a high-power GaN-based fail-safe RF switch. The TSL8329M is well-suited for 5G infrastructure and TDD massive MIMO system.
"With integrated dual-channel RF front end, the high performance TSL8329M is well suited for the most demanding 5G infrastructure radios, small cells and massive MIMO system. The footprint and pinouts allow easy adaption in complex MIMO configurations", said Klaus Buehring, Tagore Technology's Chief Marketing Officer.
The TSL8329M has a noise figure of 1 dB with 32 dB of gain at 3.6 GHz with an output third-order intercept point (OIP3) of 35 dBm. In bypass mode, the LNA provides 13 dB of gain. In power-down mode, the device draws 5 mA. In transmit operation, when RF inputs are connected to a termination pin (TERM-CHA or TERM-CHB), the switch provides a low insertion loss of 0.45 dB at 3.6 GHz and handles LTE average power (9 dB peak to average ratio (PAR)) of 43 dBm for full lifetime operation. The device comes in a RoHS-compliant, compact, 6 mm × 6 mm, 40-lead LFCSP.
Freq Range (GHz)
Gain/ IL (dB)
Max input power / OP1 (dBm)
TX: 5V, 400uA @3.6GHz
Max input power: 43 Avg, 9 dB PAR
6 x 6mm QFN-40
RX-HG: 5V,90mA @3.6GHz
RX-LG: 5V, 45mA @3.6GHz
Click here to learn more about TSL8329M from Tagore Technology.