Gallium Semiconductor, a respected supplier of GaN RF semiconductor solutions, has announced the availability of the GTH2e-2425300P ISM CW amplifier, a 2.4–2.5 GHz, 300W pre-matched discrete GaN-on-SiC High Electron Mobility Transistor (HEMT). The GTH2e-2425300P brings a new level of efficiency for a wide range of Industrial, Scientific, and Medical (ISM) applications, including semiconductor plasma sources and microwave plasma chemical vapor deposition (MPCVD) equipment for synthetic diamond production.
Roger Williams, CEO of 3D RF Energy Corp., stated, “The GTH2e-2425300P sets a new standard for performance and ease-of-use in 2.45 GHz ISM solid-state power design. Its internal matching enables a straightforward PCB design, whether that be for a 400 W narrowband design with 76% efficiency or a 300 W design with 72–74% efficiency across the entire band. It is well-behaved in both class AB and class C, and its 17 dB of gain at saturated power simplifies driver requirements.”
Operating within the frequency range of 2.4 to 2.5 GHz and powered by a 50 V supply rail, the GTH2e-2425300P yields an efficiency rating that redefines benchmarks for RF power capabilities. With a peak efficiency of 76% (pulsed, 100 µs, 10% duty cycle), this HEMT embodies Gallium Semiconductor's dedication to improving RF performance. Measured data shows a drain efficiency of over 72% under continuous wave operation. A fixed-tune demonstration board can be ordered by qualified customers.
Angelo Andres, Director of Product Marketing for Multi-Markets at Gallium Semiconductor, noted, "The GTH2e-2425300P signifies an evolution in RF power amplification and underscores our dedication to optimize performance for ISM applications. Engineers are looking for a robust supply chain partner for long-term product availability and product support, and that’s exactly what Gallium Semiconductor offers with the GTH2e-2425300P. We will continue to strengthen our portfolio for the ISM market to further support our customers."
Encased in an ACP-800 4L Air Cavity Plastic package, the GTH2e-2425300P offers excellent reliability and thermal performance (0.67 °C/W) with its Super-CMC (ceramic matrix composite) flange. It also simplifies integration into various systems, enhancing the development process for RF engineers. The GTH2e-2425300P is now available for order.
Gallium Semiconductor is showcasing this product at the European Microwave Week in Berlin this week. They are also showcasing three new 250 W L- and S-Band radar products and a new DC to 12 GHz general-purpose broadband amplifier. Stop by their booth to learn more.
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Click here to learn more about the GTH2e-2425300P ISM CW amplifier.