MACOM to Demonstrate its Gen4 GaN Portfolio at IMS 2016

MACOM will showcase its industry leading GaN on Silicon portfolio and other high-performance products at IEEE’s International Microwave Symposium (IMS) 2016 in San Francisco, California from May 24 - 26. Their booth will feature new product solutions optimized for commercial, industrial, military, scientific and medical RF applications.

Here is a list of products and technologies that will be on display at the MACOM Booth:

  • Basestation: Cutting-edge GaN 60 W average Power Doherty module live demo with Xilinx DPD
  • RF Energy: Groundbreaking GaN that will disruptive RF energy applications
  • E-Band wideband millimeter-wave Solutions: New E-Band TX and RX SMD Modules and portfolio of wideband millimeter-wave products for addressing the emerging 5G access and backhaul markets
  • PIN Diode 120 W SMT T/R Switch: A high power, broadband transmit-receive switch demonstrating low TX IL, low RX IL, high RX isolation, small physical size, plastic SMT package across DC - 1 GHz for MILCOM and Land Mobile applications
  • W-Band Power Amplifier MMIC: Power amplifier MMIC covering 80-100 GHz with leading gain and power performance
  • Latest Hi-reliability and component products for mission critical space and aerospace applications

Members of their product management, engineering and applications teams will be available at Booth #939 to answer any inquiries or questions.

MACOM experts will also be participating in various sessions throughout IMS, including:


Code: WME-4
Session: Large Signal Network Analysis: From Instrumentation Architectures to Software Applications for Your RF Design Flow Improvement
Title: Use of Nonlinear Vector Network Analyzer Measurements in the Development of GaN on Silicon for BTS Applications
Date: Monday, May 23 2016
Time: 8:00 – 17:00 PT

Code: WMH-2
Session: E-Band Communications: Market, Technology and IC Design
Title: Transceivers for Highly Spectral Efficient Multi-Gbps radio links
Date: Monday, May 23, 2016
Time: 9:00 AM PT 

Technical Session

Session: WE1B-3
Title: Soldered Hot-via E-band and W-Band Power Amplifier MMICs for Millimeter-wave Chip Scale Packaging
Date: Wednesday, May 25, 2016
Time: 8:40 AM – 9:00 AM PT
Location: Room 304


Title: GaN on Silicon Power Amplifier Bias and Decoupling Techniques
Date: Wednesday, May 25, 2016
Time: 2:30 PM PT
Location: Microapps pavilion show floor

Title: GaN on Si Thermal Behavior and Its Impact on PA Performance, Reliability and Cost
Date: Thursday, May 26, 2016
Time: 10:35 AM PT
Location: Microapps pavilion show floor


See the complete IMS 2016 Coverage on everything RF.

Publisher: everything RF
Tags:-   Power AmplifierGaNIMS 2016


  • Country: United States
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