220 Watt Highly Efficient GaN-HEMT Targets Small Cell Base Stations

GaN MitsubishiMitsubishi Electric Corporation has developed a 220 Watt-output power Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) offering excellent efficiency for 2.6 GHz 4G Base Stations. Samples of this high power GaN HEMT will be released November 1, 2016.

High-speed 4G mobile communication systems for Long Term Evolution (LTE) and LTE-Advanced are being equipped with progressively smaller Base Stations for macro-cells to increase data capacity and to reduce power consumption. This highly efficient new GaN-HEMT from Mitsubishi for 2.6 GHz-band macro-cell BTS is expected to help realize even smaller and lower-power BTS.

This 200 Watt GaN HEMT Features:

  • Excellent High drain efficiency of 74% which results in simpler cooling system, which reduces BTS size and power consumption
  • Flangeless ceramic package reduces size of device itself and related power amplifier modules

See other GaN Transistors from Mitsubishi