Oxford Instruments Develops SiC via etch for GaN-on-SiC RF Device Manufacture

Oxford Instruments, a leading provider of process solutions for a broad range of applications, has announced the development and launch of the SiC VIA plasma etch process using their high performance PlasmaPro100 Polaris etch system.

SiC is becoming an increasingly important material, particularly as a substrate for high performance GaN RF devices. A smooth via etch through the SiC is essential to enable these devices, and Oxford Instruments has developed the ideal solution for etching high quality SiC vias efficiently. Combined with a low damage GaN etch within the same hardware, the PlasmaPro100 Polaris offers a unique capability for GaN based RF device plasma etch processing requirements.

The technology developed offers several process capabilities suited to the SiC via application:

  • High SiC etch rate enabling maximum throughput
  • Smooth sidewalls for problem free post etch metallisation
  • High selectivity to underlying GaN layer giving a smooth, low damage stop onto the GaN device layers
  • Clamping of sapphire carriers using Oxford Instruments’ unique patented Electrostatic Clamp technology ensuring excellent sample temperature control and maximum yield
  • Capability of etching SiC and GaN in the same tool through advanced plasma source technology
  • High utilisation provided by long Mean Time Between Cleans (MTBC)     

Oxford Instruments delivers world leading plasma processing systems, and offers a library of over 6,000 process recipes, all backed by a global support and service network.