UltraCMOS High Linearity RF Switch Named a Market Disruptor at ECN IMPACT Awards Ceremony

UltracmosThe UltraCMOS® PE42723 high linearity RF switch from Peregrine Semiconductor has won an ECN IMPACT Award in the market disruptor category. In addition, the PE42723 switch was named a finalist in the microwaves & RF category, and the PE29100 gallium nitride (GaN) field-effect transistor (FET) driver was recognized as a finalist in the power sources & conditioning devices category. Winners were announced on the 13th of Oct. during an awards ceremony.

The ECN IMPACT Awards recognize the products and services that have the greatest impact on the electronic components industry. The market disruptor category highlights a product that forever changed the electronic engineering industry or a particular vertical within the industry. Products like the PE42723 enable the cable industry to deliver equipment that is fully compliant with today's stringent communication standards.

The PE42723 is an RF switch that boasts the highest linearity specifications on the market today. An upgraded version of the successful PE42722, this new RF switch offers enhanced performance in a smaller package. Like its predecessor, the PE42723 exceeds the linearity requirements of the DOCSIS 3.1 cable industry standard and enables a dual upstream/downstream band architecture in the next generation cable customer premises equipment (CPE) devices.

The PE29100 is the world's fastest GaN FET driver. Built on Peregrine's UltraCMOS technology, this new GaN driver empowers design engineers to extract the full performance and speed advantages from GaN transistors. Designed to drive the gates of a high-side and a low-side GaN FET in a switching configuration, the PE29100 delivers the industry's fastest switching speeds, shortest propagation delays and lowest rise and fall times to AC-DC converters, DC-DC converters, class D audio amplifiers and wireless-charging applications.

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