GaN Power Amplifiers Deliver 2.5 W of Power at E-band and W-Band Frequencies

Millitech has announced the availability of a new Gallium Nitride (GaN) based power amplifiers with exceptional output power and power-added efficiency (PAE) at E-Band and W-Band. These new AMP models cover frequencies from 75 GHz to 102 GHz. They provide up to 2.5 Watts of saturated output power with 20% PAE and a gain from 15 to 40 dB. Single device models are available with nearly 1W of output power, or 2-way and 4-way solid state power amplifiers (SSPAs) with up to 2.5 Watts of saturated output power are available. Higher power outputs are also available.

Each amplifier has internal bias circuitry that generates gate control voltages, provides proper voltage sequencing and incorporates reverse voltage protection from a single positive external bias.

These E-band and W-band GaN PAs can be used in applications ranging from e-band radio, remote sensing, as high power millimeter-wave sources, and are high enough quality for test and measurement applications. The high output power in E-band and W-band PAs eliminates the need for comparatively large and expensive combiners and waveguide interconnect necessary for less powerful amplifiers.

Click here to learn more about the AMP Series from Millitech.

Millitech

  • Country: United States
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