Peregrine Starts Volume Production of UltraCMOS 60 GHz RF SOI switches

Peregrine Semiconductor has started volume production of their UltraCMOS 60 GHz RF SOI switches. The PE42525 and PE42525 extend Peregrine’s high frequency portfolio into frequencies previously dominated by gallium-arsenide (GaAs) technology.

Both 60 GHz switches deliver exceptional performance in all key RF parameters and have a fast switching speed of only 8 nanoseconds. The PE42525 is ideal for test-and-measurement (T&M) equipment, microwave-backhaul solutions and higher frequency switching in 5G systems. The PE42525 boasts an extended temperature range making it desirable for harsh-environment applications in industrial markets.

The PE42525 and PE42525 join Peregrine’s high frequency product portfolio, which includes multiple switches, an image-reject mixer and monolithic phase and amplitude controllers (MPACs). Peregrine’s proprietary UltraCMOS technology platform enables these products to reach high frequencies without compromising performance or reliability.

Supporting a wide frequency range from 9 kHz to 60 GHz, the PE42525 and PE42525 are single-pole double-throw (SPDT) RF switches. The two reflective switches deliver an incredibly fast switching speed of 8 nanoseconds and RF RISE/FALL time of 3 nanoseconds. Both switches have a low current of 390 nanoamperes. With exceptional performance across all key RF specifications, these switches deliver high port-to-port isolation, low insertion loss, high power handling, high linearity and excellent ESD protection of 1 kV HBM. At 50 GHz, both switches exhibit port-to-port isolation of 37 dB and insertion loss of 1.9 dB. The PE42525 also has an extended temperature range from -55 to +125 degrees Celsius. They are available as a flip-chip die with 500 microns bump pitch - the best form factor for high frequency performance as it eliminates performance variations due to wire-bond length. Production parts and evaluation kits are available now.