Navitas Semiconductor Unveils the World’s First GaN Power ICs

Navitas Semiconductor has launched iDriv Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN technology. The NV6131, NV6105 & NV6115 offer a high-efficiency 650 V, 160 mOhm power FET with increasing integration of digital and analog circuits, leading to ground breaking speed, energy efficiency, power density and reduced system cost.

GaN can enable up to 100x higher frequencies than silicon but driving, controlling & protecting such high-speed power devices has been an industry challenge that has limited adoption. By integrating these critical digital and analog circuits monolithically with the GaN power device, these system level problems have been eliminated. These GaN Power ICs with iDrive guarantee optimized & robust performance for any application. A 10-100x increase in system operating frequency is combined with higher efficiencies to enable up to a 5x increase in power densities and 20% lower system costs.

According to Navitas - GaN Power ICs, with the monolithic integration of logic, analog & power, represent an industry breakthrough that will change the landscape of power electronics as we know it. By integrating all gate-drive-related circuitry, virtually all frequency-related power losses are eliminated, opening the door to significant frequency and efficiency gains. Navitas anticipate a major upgrade cycle in mobile fast chargers, thin TVs, high-efficiency data centers, LED lighting, solar and electric vehicle markets as this new high-speed revolution in power electronics gets underway.

Leading power semiconductor market researcher, Dr. Hong Lin at Yole Développement, goes on to explain  that GaN has the potential to displace a large percentage of the $15B power silicon market, but adoption has been partially limited by the system challenges in cost-effectively driving and controlling the GaN power device at high speeds. The integration of logic, analog and power in a GaN power IC solves this remaining roadblock and positions GaN to realize its full potential.

The NV6131, NV6105 & NV6115 (in 5 x 6 mm QFN) are available immediately to qualified partners. To know more, click here.