MagnaChip Unveils 0.18 Micron RF SOI Process for Enhanced Switching Performance

MagnaChip Semiconductor, a Korea-based designer and manufacturer of analog and mixed-signal semiconductor products, announced that it now offers a new 0.18 micron RFSOI process with enhanced switching performance. Compared to the previous 1.5/2.5 V process, this new switch-centric process created specifically for 2.5 V, reduces manufacturing cost and time-to-market while providing competitive and superior performance for antenna switches used in mobile and Internet-of-Things devices for wireless connectivity.

There are several benefits to using the new 0.18 micron 2.5 V RFSOI process. The primary benefit is that it is a cost effective process. It offers a 150 fs of Ron*Coff using aluminum for metal1 and reduces the number of photo steps by approximately 15% as compared to the industry standard by one poly silicon layer and four metal layers (1 P4M). By reducing the number of mask layers, customers will reduce costs and improve their time-to-market with a shorter turnaround time in the fab. Ron*Coff is a figure of merit used to rate the performance of an RF switch.

Another important benefit includes, robust breakdown at above 4 V while also maintaining Ron*Coff at 150 fs. Through high BV (Breakdown Voltage), the stack number of switch is reduced, resulting in chip size reduction.

The new 0.18 micron RFSOI process reduces insertion loss by 20% at 2 GHz and enables low harmonics of better than -60 dBm at a 35 dBm power level. This process, which has successfully been demonstrated with an SP8T (Single Pole Eight Throw) switch, builds on a trap-rich, high-resistivity substrate to suppress harmonic distortion. It also provides additional transistors with useful options such as floating body, low leakage, and enables a reduction in area of approximately 18%, from our previous process, for the integration of multiple RF and analog functions onto a smaller die. Available process options also include a 27-volt metal-inductor-metal capacitor, geometry scalable inductor, high resistivity poly resistor, MOS varactor, and up to 4 layers of metal with 4-micron thick top metal for rich power handling.