According to a recent research report from Future Market Insights, advancements in wireless communication standards are expected to drive growth of the global CMOS power amplifier market to nearly $5 Billion by 2026. Revenue from the global CMOS power amplifier market is expected to exhibit a CAGR of 16.6% during the assessment period. The global CMOS power amplifier market is expected to rise from $1.1 Billion in 2016 to $5 Billion in 2026.
The GSM/EDGE segment is expected to remain dominant in the global CMOS power amplifier market with revenue reaching nearly US$ 1400 Mn by 2026 end, up from about US$ 325 Mn in 2016. The revenue is expected to register a CAGR of 14.6% during the assessment period.
Revenue from the LTE segment is likely to expand at a relatively high CAGR of 20.2% during the forecast period, with revenue valued at more than US$ 1 Billion by 2026, from nearly US$ 200 Mn in 2016.
Revenue from the CDMA 2000 segment in the global CMOS power amplifier market is expected to be valued at nearly US$ 500 Mn by 2026 from about US$ 100 Mn in 2016 with a CAGR of 16.2% during the assessment period.
With rapid development and adoption of 4G wireless communication, performance requirements have increased due to the rising need for increased bandwidth and quicker data speeds. The CMOS power amplifier is recognised as a prominent solution to meet the need for low cost, low power and high capacity of 4G technology. Moreover, several key players in the market are currently launching new CMOS power amplifiers that are compatible with LTE and advanced LTE technologies. In October 2015, ACCO Semiconductor Inc. - a fabless semiconductors provider based in the U.S. - introduced CMOS Multi-mode, Multi-band Power Amplifier (MMPA) - designed to support quad-band GSM/EDGE and 12-band 3G/LTE smartphones and applications in the Internet of Things.
Owing to recent advancements in CMOS technology, various beneficial features such as low power consumption, high yield, high integration of systems on chip (SoC) and efficient switched-mode amplifiers have been introduced. One of the major factors due to which CMOS is gaining rapid traction is its cost effectiveness as compared to other commonly used technologies for radio frequency (RF) front end circuits such as Gallium Arsenide (GaAs), BiCMOS and silicon bipolar. CMOS technology is more cost-effective owing to it being a single-chip solution. Moreover, technological advancements have enabled CMOS RF circuits to deliver performance comparable to GaAs, BiCMOS and silicon bipolar technologies.