Ampleon to Showcases LDMOS and GaN RF PA Portfolio at EDI CON China

EDICON 2017 Ampleon

Ampleon has announced its participation at the forthcoming Electronic Design Innovation Conference (EDI CON) held in Shanghai, China April 25 – 27, 2017. This event is orgamized by Microwave Journal.

At the booth, 243, Ampleon will showcase its latest RF amplifier devices and modules suitable for use in Mobile Broadband, broadcast, industrial, radar and avionics, and RF energy applications. 

Product demonstrations will include a 400 Watt S-band pallet, a 900 Watt UHF broadcast design and a 2,000 Watt 127 MHz ISM band example. Also on show will be a 433 MHz, 200 W pallet with integrated sensing for use in RF energy applications.

Ampleon’s LDMOS product portfolio includes broadband devices, transistors for Doherty amplifiers, extremely rugged high power devices designed for industrustrial, scientific and medical applications, and fransistors for civilian radars. The GaN on SiC line-up includes high power broadband devices and drivers.

In addition to a comprehensive line-up of their latest products and solutions, Ampleon staff are also actively participating in the conference programme.

On Tuesday, April 25 at 1.50pm: Pinglu Chen, Managing Director, Ampleon Semiconductors (Hefei) Co. Ltd, China, Ampleon will take part in the RF Energy Alliance panel workshop titled - Solid-State RF Energy in 2017: The volume breakthrough is finally there, is it not?

On Wednesday, April 26 at 1.45pm: Francis Auvray, Senior RF Engineer at Ampleon will chair a workshop on 20 W Fully Integrated 3.5 GHz GaN Doherty MMICs for 5G Applications.

Also on Wednesday, April 26: Nick Pulsford, Senior Vice President R&D/Technology at Ampleon will participate in the panel regarding trends in mobile infrastructure at 1.45pm.

Staff from local distribution partners DXY Technology, Flyring Electronics and Transemic Technology will be co-exhibiting alongside Ampleon at the booth.

Publisher: everything RF
Tags:-   GaNLDMOS


  • Country: Netherlands
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