StratEdge Introduces Packages for High Frequency GaN MMICs

StratEdge Corporation has expanded its family of high-power laminate copper-moly-copper (CMC) base packages to include both gallium nitride (GaN) transistor and MMIC device packages and package assembly services. The LL family of packages can now accommodate large MMICs, with die attach areas as large as 5.92 X 12.14 mm. They can operate at frequencies from DC to 63 GHz covering applications in communications, radar, automotive, aerospace, defense, and those requiring high power millimeter-wave signals.

In addition to the packages, which are manufactured in StratEdge’s San Diego, California facility, they offer complete automated assembly and test services for these packages, including gold-tin solder die attach. These assembly processes routinely generate more than 96% void-free attachment with bond line thicknesses of less than 6 microns when used with the new LL series of packages. This is particularly important for GaN power amplifiers where efficient thermal transfer is critical for improved operation and reliability of the device.

The LL family of CMC-base packages dissipate heat from high-power compound semiconductor devices, such as gallium nitride (GaN), gallium arsenide (GaAs), and silicon carbide (SiC). Both leaded and leadless versions of these packages are available. Standard transistor packages are 0.8 in. (20.32 mm) long x 0.23 in. (5.84mm) wide with 2 leads and a raised lid with an epoxy seal. Packages are either flangeless, with a fully hermetic seal and a flat ceramic lid, or flange packages, with a bolt hole on each end so the package can be bolted to the printed circuit board. These laminate power packages are built with a base material ratio of 1:3:1 CMC, which provides a good thermal match for alumina-based materials and a GaN chip.

StratEdge will be exhibiting at the 2017 International Microwave Symposium (IMS2017), to be held 6-8 June 2017, in Honolulu, Hawaii.