Infineon to Dispaly Its RF and mmWave Products at IMS 2017

Infineon will be showcasing their RF and mmWave products at the International Microwave Symposium 2017, at the Hawaii Convention Center in Honolulu, Hawaii from 6 - 8 June. Their engineering experts will be demonstrating innovative radar based solutions for gesturing, blind spot detection, smart lighting, building automation, and best in class technologies in Cellular, Radar & Avionics, and ISM applications.

The Solutions on Display will Include:

Radar Sensors
The BGT24Mxx family includes the highest integration 24 GHz ISM Band Transceivers now available, supporting compact and power-efficient designs for motion sensing applications in such areas as building automation, lighting control and alarms, industrial and automotive environments. The SiGe devices have a wide coverage area and millimeter range accuracy, can be configured to detect motion and position, and are suited for production using standard chip-handling equipment.

Radar-based Gesture Control
Breakthrough gesture control systems based on Infineon’s 60 GHz Radar-on-a-Chip will help to redefine interface design for small and wearable electronics systems. Image capture at up to 10k fps allows high accuracy precise tracking from finger movement to full hand gestures. Ruggedness and simplicity of mm-wave radar achieves superior performance compared to visual sensor systems.

Wireless Backhaul
Broadband wireless backhaul plays a critical role in today’s high speed wireless networks. This E-Band radio front-end reference design provides system designers with a fast track to deploy multi-gigabit backhaul links. The BGT70 / BGT80 mmWave Transceivers leverage Infineon’s SiGe:C technology for high-performance while offering price and time-to-market advantages.

 

Radar, Avionics & ISM Optimized RF
Operating at power levels from 4 W to 1400 W, Infineon offers specialized LDMOS and GaN on SiC transistors for L-Band and S-Band RADAR, commercial avionics, and ISM band applications. The product portfolio is being expanded with a new 1400 W GaN-SiC Avionics and new 180 W S-Band transistor.

Cellular Infrastructure
Infineon’s GaN on SiC RF Power Transistors allow smaller, more efficient base station designs. Available in 1.8 - 2.2 GHz, 2.3 - 2.7 GHz and 3.4 - 3.6 GHz frequency range, these devices offer 2x bandwidth improvement vs. LDMOS RF traditional silicon-based transistors.

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