39 GHz Dual-Channel GaN FEM for Next-Generation 5G Applications

Qorvo has released the industry’s first Gallium Nitride on Silicon Carbide (GaN-on-SiC) front-end module (FEM) for the 39 GHz 5G frequency band. The QPF4005 FEM addresses the complex challenges faced by telecom equipment manufacturers designing 5G base stations.

The dual-channel QPF4005 is built on Qorvo’s highly efficient 0.15-micron GaN-on-SiC technology. It integrates two identical, multi-function GaN MMICs into a small footprint, optimized for phased array element spacing at 39 GHz. Each of the MMICs contains a low-noise amplifier, a SPDT switch and a power amplifier.

Telecom equipment manufacturers realize significant improvements in efficiency and operational bandwidth with Qorvo’s GaN-on-SiC technology. It’s GaN-on-SiC products deliver high power density, reduced size, excellent gain, high reliability and process maturity, with volume production dating back to 2000. For more information about the benefits of Qorvo’s GaN-on-SiC, click here.

Qorvo wireless infrastructure products will be showcased at the 2017 International Microwave Symposium in Honolulu, Hawaii, June 4-9, in booth #1510.

Click here to see IMS 2017 Event coverage on everything RF.


  • Country: United States
More News From Qorvo