Custom MMIC's GaAs and GaN MMIC Innovations on Display at IMS 2017

Custom MMIC will be showcasing their latest amplifier and mixer products at the International Microwave Symposium 2017 in Honolulu, Hawaii. IMS 2017 attendees who are interested in high performance MMICs can visit the Custom MMIC team to learn about their new GaAs and GaN MMIC innovations.

They will be talking about their latest ultra-high linearity and ultra-wide IF bandwidth mixers, CMD181 and CMD261, with IF bandwidths of DC to 12 GHz and 5 GHz to 20 GHz, and RF frequencies from 26 GHz to 45 GHz and 30 GHz to 46 GHz, respectively. These passive double balanced mixers have an extremely low conversion loss of 6.5 dB, and can be used as image reject mixers or single sideband modulators with a few external components.

They will also feature their newest wideband gallium arsenide (GaAs) distributed power amplifier MMICs (Pas), the CMD249 and CMD201P5, which operate from DC to 20 GHz and have an output P1dB of 30 dBm. An exciting topic of discussion will also be their new low phase noise amplifiers (LPNAs). Released earlier this year, these unique MMICs deliver additive phase noise as low as -165 dBc/Hz, low noise, and wideband performance in microwave and millimeter-wave frequency bands from 6 GHz to 40 GHz.

Paul Blount, Custom MMIC President and CTO, will be giving an IMS Micro-Apps presentation on 'Practical approaches to combating phase noise and jitter in RF systems'. For those interested, this will be held Tuesday June 6 at 2:40 pm HST in the IMS Exhibit Hall (Booth #1946).

A large number of Custom MMIC components have been incorporated into the X-Microwave prototyping and manufacturing system. Custom MMIC engineers will be available to discuss the benefits of this innovative rapid prototyping technology, previously unavailable for high performance RF and microwave systems.

See the complete coverage of IMS 2017 on everything RF.