Qorvo GaN-on-SiC Transistors Boost Performance of Tactical and Public Safety Radios

Qorvo has introduced a new family of 50-volt gallium nitride on silicon carbide (GaN-on-SiC) transistors that improve performance, increase functionality and accelerate development of mission-critical tactical and public safety radios. The transistors are input-matched for wideband applications and feature a compact footprint, enabling smaller, next-generation communications devices.

Higher voltage transistors deliver a number of key benefits, including increased output power, reduced current loss, greater reliability, and require fewer transistors in system designs. Additionally, wideband matching increases energy efficiency and allows board designs to be optimized for specialized military and first responder devices. Qorvo’s newest transistors are designed for space-constrained, mission-critical applications ranging from military and land-mobile radio communications to avionics and test instruments.

The following three 50V GaN on SiC Transistors were introduced:

QPD1004 - The Qorvo QPD1004 is a 25 W (P3dB), 50 Ohm input matched discrete GaN on SiC HEMT which operates from 30 to 1200 MHz on a 50 V supply rail. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 6 x 5 mm surface mount DFN package. Lead-free and ROHS compliant. Evaluation boards are available upon request.

QPD1014 - The QPD1014 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz on a 50 V supply rail. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Lead-free and ROHS compliant. Evaluation boards are available upon request.

QPD1011 - The Qorvo QPD1011 is a 7 W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 5 x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios. Lead-free and ROHS compliant. Evaluation boards are available upon request.

Qorvo offers a variety of high power and high frequency RF transistors, including GaAs pHEMTs and GaN HEMTs, in both die and packaged form.

Qorvo is showcasing their portfolio of GaN products at the 2017 International Microwave Symposium in Honolulu, Hawaii, from 6-8 June, in booth #1510.

Qorvo

  • Country: United States
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