WIN Semiconductors Expands its High Voltage GaAs Process to Support GaN Hybrid Power Amplifiers

WIN Semiconductors, the pure-play compound semiconductor foundry, has expanded its IP3M high voltage integrated passive device process to include matching networks for 28 V (IP3M-00) and 50 V (IP3M-01) applications. This is the voltage at which GaN Power Amplifiers operate. The IP3M process provides high quality factor circuit elements combined with humidity ruggedness required for use in low-cost plastic packages.

The flexible IP3M passive circuit platform provides three metal interconnect layers and high breakdown voltage capacitors needed to support reliable operation at 28 V and 50 V. These high quality passive elements are formed in a humidity robust architecture utilizing silicon nitride and multilayer low-k dielectric films. This process approach provides excellent resistance to humidity ingression at the high bias voltages used in GaN hybrid power amplifiers. The moisture resistance provided by IP3M enables passive networks compatible with 28 V or 50 V bias in non-hermetic plastic packages.

The IP3M integrated passive device platform is fabricated on 150 mm semi-insulating GaAs wafers, and targets high voltage applications that require cost effective high-Qmatching networks. The new IP3M-00 and IP3M-01 employ the same three-metal platform that uses low-k dielectric crossovers for compact design rules, and high resistance to moisture ingression at the voltage levels commonly used by GaN technology.

This IP3M process provides up to 7µm thick Au metallization with through-wafer vias for flexible ground connections. Additionally, IP3M allows layout flexibility for customers to optimize inductor quality factor, power combining and bond-pad arrangement to match a wide array of power cells in a multitude of package styles and environments.

WIN Semiconductors showcased its RF and mm-Wave solutions at the 2017 IEEE International Microwave Symposium in Honolulu, Hawaii last week.