MACOM to Exhibit its GaN-on-Si Portfolio at EuMW 2017

MACOM will showcase its leading Gallium Nitride-on-Silicon (GaN-on-Si) portfolio and other high-performance MMIC and Diode products at EuMW 2017 in Nürnberg, Germany from October 10 - 12. MACOM’s booth will feature new product solutions optimized for basestation, aerospace and defense, RF energy, commercial, industrial, scientific and medical RF applications.

At EuMW 2017 MACOM Will be Showcasing the Following:

  • High-Power GaN-on-Si:
    • RF Energy Toolkit enabling faster and easier solid-state RF system development
    • 500 W GaN-on-Si device boasting efficiency and power at elevated temperature, ideal for rugged Aerospace and Defense applications
  • RF Small Signal Portfolio: Featuring high-performance MMICs and Basestation and Mobile Backhaul devices
  • High-Performance Diodes: Industry-leading diode design and application-specific solutions
  • Hi-Rel and Component Devices: The latest screened products for mission critical Aerospace applications

Members of MACOM’s product management, engineering and applications teams will be available at Booth #200 to answer any questions.

MACOM experts will also be participating in various sessions throughout EuMW, including:

  • Technical Session EuMIC02-1: GaN-on-Silicon – Present Challenges and Future Opportunities
    • Presenter: Tim Boles
    • Date: Monday, October 9th
    • Time: 8:30 - 8:50 AM CEST
    • Location: Riga
  • Poster Session EuMIC05-03: Rugged AlGaAs PIN Diode Switches
    • Presenter: James Brogle
    • Date: Monday, October 9th
    • Time: 12:30 – 2:10 PM CEST
    • Location: Conference Centre
  • Defence, Security & Space Forum - MWJ Industry Panel Session: Internet of Space, Past, Present & Future
    • Presenter: Tim Boles
    • Date: Wednesday, October 11th
    • Time: 1:50 – 3:30 PM CEST
    • Location: St. Petersburg

For more information about EuMW 2017, click here.


  • Country: United States
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